2013. 10. 23 1/2 semiconductor technical data MBRD5U150 schottky barrier type diode revision no : 0 switching mode power supply application. converter & chopper application. features h average output rectified current : i o =5a. h repetitive peak reverse voltage : v rrm =150v. maximum rating (ta=25 ? ) dpak (1) dim millimeters a a b b c c d d f ff h g k g j l k l m 0.96 max 0.90 max e e m n h 0.70 min o 0.1 max n 123 6.60 0.20 + _ 6.10 0.20 + _ 5.34 0.30 + _ 0.70 0.20 + _ 2.70 0.15 + _ 2.30 0.10 + _ 1.80 0.20 + _ 0.50 0.10 + _ 2.30 0.10 + _ 0.50 0.10 + _ j o 1. n.c 2. cathode 3. anode electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit peak forward voltage v fm i fm =5a - - 0.9 v repetitive peak reverse current i rrm v rrm =150v - - 100 u thermal resistance r th(j-c) juction to case - - 5 ? /w characteristic symbol rating unit repetitive peak reverse voltage v rrm 150 v average output rectified current (tc=114 ? ) i o 5 a peak one cycle surge forward current (non-repetitive 60hz) i fsm 125 a junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? 3 1 2 cathode anode n .c * 1 inch square copper pad, fr-4 board
2013. 10. 23 2/2 MBRD5U150 revision no : 0 reverse current i r ( a) reverse voltage v r (v) i r - v r i f - v f forward voltage v f (v) rated voltage applied r th(j-c) = 5 c/w forward current i f (a) 0 0.2 0.1 0.4 0.6 0.8 1 0 1 5 25 50 75 100 125 0.01 0.1 1 100 10 1,000 150 a t =75 c a t =25 c t =100 c a a t =25 c t =100 c a a t =75 c average forward power dissipation p f(av) (w) average forward current i f(av) (a) p f(av) - i f(av) i f - t c case temperature t c ( c) average forword current i f(av) (a) 0 110 0 1 120 130 140 150 100 2 7 6 5 4 3 12345 0 1 2 3 5 4 6 6 termal resistance r th ( c/w) power time (sec) r th(j-c) p r - v r reverse voltage v r (v) reverse power dissipation p r (mw) 0.001 25 0 50 75 100 125 150 0 2 1 4 3 0.01 0.1 1 0.1 1 10 10 r th(j-c) = 5 c/w
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